By Philip J. Davis, William G. Chinn
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Extra info for 3.1416 and All That, Second Edition
1a is also positive, it may be inferred that the BF effect offsets the BGR effect in as-grown narrow band gap GaxIn1-xAs. It should also be noted that the photoexcitation of carriers for transient reflectivity experiments performed on as-grown narrow band gap GaxIn1-xAs occurs far above the materials’ band edge. Therefore intervalley scattering can play a significant role in determining the temporal evolution of the reflectivity change, especially on a sub-picosecond time scale.
Phys. Lett. 82, 3116 (2003) 14. 06 lm laser excitation. Appl. Phys. Lett. 83, 4113 (2003) 15. : Continuouswave terahertz photomixing in low-temperature InGaAs. THz Technology, Ultrafast Systems and Measurements, IEEE, 367 (2004) 16. 55 lm. Appl. Phys. Lett. 87, 193510 (2005) 17. 55 lm. Appl. Phys. Lett. 83, 5551 (2003) 18. 56 mm wavelength excitation. Appl. Phys. Lett. 86, 051104-1 (2005) 19. 60) excited by femtosecond lasers at wavelengths of 1560, 1050 and 780 nm. In: The Joint 30th International Conference on Infrared and Millimeter Waves, vol.
A pellicle beam splitter is put in the THz beam line for this purpose. As the THz pulse and probe beam co-propagate through the electro-optic crystal, a phase modulation is induced on the probe beam which depends on the electric field of the THz radiation . 1 Terahertz Time-Domain Spectroscopy Setup 37 The phase modulation of the probe beam is analyzed by a quarter wave (k/4) plate and the beam is then split into two beams of orthogonal polarizations by a Wollaston prism. At this point, the phase modulation of the probe beam is converted to an intensity modulation of the two orthogonal polarizations of the probe beam, which are then steered into a pair of balanced photodiodes.
3.1416 and All That, Second Edition by Philip J. Davis, William G. Chinn